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Infineon IGBT-Module der Serien BSM/FF/FS
- IGBT Dioden-Module
- im 34MM-1- / 62MM-1- / EASY2-1- / EASY1B-1-Gehäuse
- Bipolartransistor mit isolierter Gate-Elektrode
FS 35 R 12 W1T4
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | FS35R12W1T4BOMA1 |
| Gehäuse | EASY1B-1 |
| Stoßstrom-Grenzwert [A] | - |
| Max. Rückwärts-Spitzensperrspannung [V] | - |
| Mittelwert Durchlassstrom [A] | - |
| Verlustleistung [mW] | 225 |
| Einschaltverzögerungszeit [ns] | 25 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 5 |
| Max. Kollektorstrom, gepulst [A] | 70 |
| Ausschaltverzögerungszeit [ns] | 300 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 65 |