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IKB30N65ES5ATMA1
Infineon SMD IGBTs der Serien IGB/IKB/IKN
SMD-Bipolartransistor mit isolierter Gate-Elektrode (SMD IGBTs) im D²Pak- (TO263-3) oder SOT223-Gehäuse und mit TRENCHSTOP™. Wir bieten diverse Ausführungen dieser Infineon Serie an.
- gegurtet
IKB30N65ES5ATMA1
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IKB30N65ES5ATMA1 |
| Gehäuse | TO-263 (D2PAK) |
| Verlustleistung [W] | 188 |
| Einschaltverzögerungszeit [ns] | 17 |
| Ausschaltverzögerungszeit [ns] | 124 |