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IKZ 75 N 65 EH5
Infineon IGBTs der Serien IGW/IGZ/IKW/IKZ
Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs) im TO247-Gehäuse und mit TRENCHSTOP™. Wir bieten diverse Ausführungen dieser Infineon Serie an.
IKZ 75 N 65 EH5
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IKZ75N65EH5XKSA1 |
| Gehäuse | TO247-4 |
| Verlustleistung [W] | 395 |
| Einschaltverzögerungszeit [ns] | 26 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 650 |
| Gate-Schwellenspannung, min. [V] | 3,2 |
| Max. Kollektorstrom, gepulst [A] | 300 |
| Ausschaltverzögerungszeit [ns] | 347 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 90 |