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IKW30N65ET7XKSA1
Infineon IGBTs der Serien IGW/IGZ/IKW/IKZ
Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs) im TO247-Gehäuse und mit TRENCHSTOP™. Wir bieten diverse Ausführungen dieser Infineon Serie an.
IKW30N65ET7XKSA1
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IKW30N65ET7XKSA1 |
| Gehäuse | TO247 |
| Verlustleistung [W] | 188 |
| Einschaltverzögerungszeit [ns] | 20 |
| Gate-Schwellenspannung, min. [V] | 5 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 650 |
| Ausschaltverzögerungszeit [ns] | 245 |