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IPP 65 R 190 C7
Infineon MOSFETs der Serien IPA und IPP
- Leistungs-MOSFETs
- im TO220- bzw. TO220-Fullpak-Gehäuse
- einfach zu betreiben
- CoolMOS™
IPP 65 R 190 C7
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IPP65R190C7FKSA1 |
| Gehäuse | TO220 |
| Max. Drain-Source-Spannung [V] | 650 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,190 |
| Einschaltverzögerungszeit [ns] | 11 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 13 |
| Gate-Schwellenspannung, min. [V] | 3,0 |
| Ausschaltverzögerungszeit [ns] | 54 |