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IRF1010EPBF
Infineon MOSFETs der Serien IRF und IRL
Leistungs-MOSFETs im TO220AB-Gehäuse und mit einem geringen Drain-Source-Durchlasswiderstand. Wir bieten dieverse Ausführungen dieser Infineon Serie.
IRF1010EPBF
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRF1010EPBF |
| Gehäuse | TO-262 |
| Max. Drain-Source-Spannung [V] | 55 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 20 |
| Gate-Schwellenspannung, min. [V] | 4 |