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IRLU 120 N
Infineon MOSFETs der Serien IRFU und IRLU
- Leistungs-MOSFETs
- im TO251AA-Gehäuse
- International Rectifier HEXFET®
IRLU 120 N
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRLU120NPBF |
| Gehäuse | TO251AA |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,185 |
| Einschaltverzögerungszeit [ns] | 4 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 10 |
| Gate-Schwellenspannung, min. [V] | 1 |
| Ausschaltverzögerungszeit [ns] | 23 |