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BSP 315 P
Infineon MOSFETs der Serien OptiMOS und SIPMOS
Leistungs-MOSFETs in SMD Bauweise im SOT223-Gehäuse mit einer Verlustleistung von 1,8W. Wir bieten diverse Ausführungen dieser Infineon Serien an.
BSP 315 P
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | BSP315PH6327XTSA1 |
| Gehäuse | SOT223 |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,8 |
| Einschaltverzögerungszeit [ns] | 24 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 1,17 |
| Gate-Schwellenspannung, min. [V] | 1 |
| Ausschaltverzögerungszeit [ns] | 32 |