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SGP 07 N 120
Infineon IGBTs der Serie SGP
- Bipolartransistor mit isolierter Gate-Elektrode
- im TO220-Gehäuse
- NPT-Technologie
SGP 07 N 120
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | SGP07N120XKSA1 |
| Gehäuse | TO220 |
| Verlustleistung [W] | 125 |
| Einschaltverzögerungszeit [ns] | 27 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Max. Kollektorstrom, gepulst [A] | 27 |
| Ausschaltverzögerungszeit [ns] | 440 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 16,5 |