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SGP 15 N 120
Infineon IGBTs der Serie SGP
- Bipolartransistor mit isolierter Gate-Elektrode
- im TO220-Gehäuse
- NPT-Technologie
SGP 15 N 120
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | SGP15N120XKSA1 |
| Gehäuse | TO220 |
| Verlustleistung [W] | 198 |
| Einschaltverzögerungszeit [ns] | 18 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Max. Kollektorstrom, gepulst [A] | 52 |
| Ausschaltverzögerungszeit [ns] | 580 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 30 |