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BS 170
ON Semiconductor MOSFETs der Serie BS
- ONS Kleinleistungs-MOSFETs
- im TO92-Gehäuse
- lose (BS_) und gegurtet (BS_ Gurt)
BS 170
Technische Daten
| Hersteller | ON Semiconductor (ONS) |
| Herstellerbezeichnung | BS170 |
| Gehäuse | TO92 |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 5 |
| Einschaltverzögerungszeit [ns] | 10 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 0,5 |
| Gate-Schwellenspannung, min. [V] | 0,8 |
| Ausschaltverzögerungszeit [ns] | 10 |