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BSP 295
Infineon MOSFETs der Serien OptiMOS und SIPMOS
- Leistungs-MOSFETs in SMD Bauweise
- im SOT223-Gehäuse
- mit einer Verlustleistung von 1,8W
BSP 295
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | BSP295H6327XTSA1 |
| Gehäuse | SOT223 |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,3 |
| Einschaltverzögerungszeit [ns] | 5,4 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 1,8 |
| Gate-Schwellenspannung, min. [V] | 0,8 |
| Ausschaltverzögerungszeit [ns] | 27 |