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IXFN 200 N 10 P
Littelfuse MOSFETs der Serien IXFN und IXTN
- Leistungs-MOSFETs
- im SOT227B-Gehäuse
- HiPerFET™ / Polar™ / GigaMOS™
IXFN 200 N 10 P
Technische Daten
| Hersteller | Littelfuse |
| Herstellerbezeichnung | IXFN200N10P |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0075 |
| Einschaltverzögerungszeit [ns] | 30 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 200 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Ausschaltverzögerungszeit [ns] | 150 |