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FCP11N60F
ON Semiconductor MOSFETs der Serien BUZ/FCP/FDP/FQP/RFP
- ONS Leistungs-MOSFETs
- im TO220-/TO220AB-Gehäuse
- SuperFET® / FRFET® / UniFET® / PowerTrench® / QFET® / MegaFET®
FCP11N60F
Technische Daten
| Hersteller | ON Semiconductor (ONS) |
| Herstellerbezeichnung | FCP11N60F |
| Gehäuse | TO220 |
| Verlustleistung [W] | 125 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,38 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 11 |
| Einschaltverzögerungszeit [ns] | 34 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Ausschaltverzögerungszeit [ns] | 119 |