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FDC6561AN
ON Semiconductor SMD MOSFETs der Serien FDC und NDC
- ONS SMD-Kleinleistungs-MOSFETs
- im SOT23-6-Gehäuse
- PowerTrench™
FDC6561AN
Technische Daten
| Hersteller | ON Semiconductor (ONS) |
| Herstellerbezeichnung | FDC6561AN |
| Gehäuse | SOT23-6 |
| Verlustleistung [W] | 0,96 |
| Max. Drain-Source-Spannung [V] | 30 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,095 |
| Einschaltverzögerungszeit [ns] | 6 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 2,5 |
| Gate-Schwellenspannung, min. [V] | 1 |
| Ausschaltverzögerungszeit [ns] | 12 |