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J 112
ON Semiconductor JFETs der Serie J1
- Kleinleistungs-JFETs
- mit einer geringen Verlustleistung
- im TO92-Gehäuse
- lose (J_) oder gegurtet (J_ reel)
J 112
Technische Daten
| Hersteller | ON Semiconductor (ONS) |
| Herstellerbezeichnung | J112 |
| Gehäuse | TO92 |
| Max. Dauer-Drainstrom | 50mA |
| Verlustleistung [W] | 0,625 |
| Gate-Schwellenspannung, min. [V] | -5 |
| Max. Drain-Gate-Spannung [V] | 35 |
| Zero-Gate Drainstrom [mA] | >5 |