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FM 25V10-G
Cypress FRAMs der Serie FM25
- nichtflüchtige ferroelektrische Speicherbausteine im SO8 bzw. TDFN8 Gehäuse (FN_-DG)
- als Ersatz für serielle SPI-FLash oder SPI-EEPROMs
- geeignet für bis zu 100 Billionen (1014) Schreib-/Lesezyklen
- mit bis zu 38 Jahren Datenerhalt
- Hard- und Software-Schutz
- Versorgungsspannung: 2 bis 3,6V
- Betriebstemperaturbereich: -40 bis +85°C
FM 25V10-G
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | FM25V10-G |
| Gehäuse | SO8 |
| Organisation | 128kx8 |
| Frequenz [MHz] | 40 |