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STB 11 NK 50 Z
STMicroelectronics SMD MOSFETs der Serie STB
- SMD-Leistungs-MOSFETs
- im D²Pak-Gehäuse
- MDmesh™ / SuperMESH™ / STripFET™ / DeepGATE™
- gegurtet
STB 11 NK 50 Z
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STB11NK50ZT4 |
| Gehäuse | D²Pak |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 500 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,52 |
| Einschaltverzögerungszeit [ns] | 14,5 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 10 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Ausschaltverzögerungszeit [ns] | 41 |