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STB 100 N 10 F7
STMicroelectronics SMD MOSFETs der Serie STB
- SMD-Leistungs-MOSFETs
- im D²Pak-Gehäuse
- MDmesh™ / SuperMESH™ / STripFET™ / DeepGATE™
- gegurtet
STB 100 N 10 F7
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STB100N10F7 |
| Gehäuse | D²Pak |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,008 |
| Einschaltverzögerungszeit [ns] | 27 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 80 |
| Gate-Schwellenspannung, min. [V] | 2,5 |
| Ausschaltverzögerungszeit [ns] | 46 |