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STGW 30 V 60 DF
STMicroelectronics IGBTs der Serie STGW
Bipolartransistor mit isolierter Gate-Elektrode (IGBTs) im TO247-Gehäuse und mit PowerMESH™. Wir bieten diverse Ausführungen dieser STMicroelectronics Serie an.
STGW 30 V 60 DF
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGW30V60DF |
| Gehäuse | TO247 |
| Verlustleistung [W] | 258 |
| Einschaltverzögerungszeit [ns] | 45 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 600 |
| Gate-Schwellenspannung, min. [V] | 5 |
| Max. Kollektorstrom, gepulst [A] | 120 |
| Ausschaltverzögerungszeit [ns] | 189 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 60 |