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STGW30NC120HD
STMicroelectronics IGBTs der Serie STGW
Bipolartransistor mit isolierter Gate-Elektrode (IGBTs) im TO247-Gehäuse und mit PowerMESH™. Wir bieten diverse Ausführungen dieser STMicroelectronics Serie an.
STGW30NC120HD
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STGW30NC120HD |
| Gehäuse | TO-247 |
| Verlustleistung [W] | 220 |
| Einschaltverzögerungszeit [ns] | 29 |
| Gate-Schwellenspannung, min. [V] | 3,75 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Ausschaltverzögerungszeit [ns] | 275 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 60 |