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TSG65N068CE RVG
Taiwan Semiconductor SMD-Leistungs-MOSFETs der Serie TSG65N_
SMD-Leistungs-MOSFETs E-mode GaN im PDFN88-Gehäuse, bzw. im PDFN56-Gehäuse (TSG65N190CR RVG) und mit N-Kanal. Wir bieten die folgenden Ausführungen dieser Taiwan Semiconductor Serie an: TSG65N068CE RVG, TSG65N110CE RVG, TSG65N195CE RVG und TSG65N190CR RVG.
TSG65N068CE RVG
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSG65N068CE RVG |
| Gehäuse | PDFN-88 |
| Max. Drain-Source-Spannung [V] | 650 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 30 |