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TSM 60 NB 190 CI
Taiwan Semiconductor MOSFETs der Serie TSM
- TSC Leistungs-MOSFETs
- im ITO220- bzw. TO220-Gehäuse
- N-Kanal
TSM 60 NB 190 CI
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM60NB190CI C0G |
| Max. Dauer-Drainstrom | 18 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,19 |
| Einschaltverzögerungszeit [ns] | 36 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 95 |