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TSM 60 NB 600 CH
Taiwan Semiconductor MOSFETs der Serie TSM
- TSC Leistungs-MOSFETs
- im TO251-Gehäuse
- N-Kanal
TSM 60 NB 600 CH
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM60NB600CH C5G |
| Gehäuse | TO251 |
| Max. Dauer-Drainstrom | 7 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,6 |
| Einschaltverzögerungszeit [ns] | 20,8 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 43 |