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TSM 051 N 04 LCP
Taiwan Semiconductor MOSFETs der Serie TSM
- TSC SMD-Leistungs-MOSFETs
- im TO252-Gehäuse
- gegurtet
TSM 051 N 04 LCP
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM051N04LCP ROG |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 40 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0051 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 96 |
| Einschaltverzögerungszeit [ns] | 6 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 23 |