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TSM 60 NB 900 CP
Taiwan Semiconductor MOSFETs der Serie TSM
- TSC SMD-Leistungs-MOSFETs
- im TO252-Gehäuse
- gegurtet
TSM 60 NB 900 CP
Auslaufartikel, nur noch der Lagerbestand verfügbar.
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM60NB900CP ROG |
| Gehäuse | TO252 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,9 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 4 |
| Einschaltverzögerungszeit [ns] | 18 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 36,4 |