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TSM085NB03CV RGG
Taiwan Semiconductor SMD-MOSFETs der Serie TSM
- N-Kanal SMD-Leistungs-MOSFETs
- im PDFN33-Gehäuse
- entsprechen IEC61249-2-21
- geeignet für die direkte Montage auf Leiterplatten
TSM085NB03CV RGG
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM085NB03CV RGG |
| Gehäuse | PDFN33 |
| Max. Drain-Source-Spannung [V] | 30 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0085 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 58 |
| Einschaltverzögerungszeit [ns] | 5 |
| Gate-Schwellenspannung, min. [V] | 1 |
| Ausschaltverzögerungszeit [ns] | 14 |