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TSM60NE069PW C0G
Taiwan Semiconductor MOSFETs der Serie TSM
TSC Leistungs-MOSFETs im ITO220- bzw. TO220-Gehäuse. Wir bieten diverse Ausführungen dieser Taiwan Semiconductor Serie an.
- N-Kanal
TSM60NE069PW C0G
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM60NE069PW C0G |
| Gehäuse | TO247 |
| Max. Dauer-Drainstrom | 51 |
| Max. Drain-Source-Spannung [V] | 600 |