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IRFD 110
Vishay MOSFETs der Serien IRFD und IRLD
- Leistungs-MOSFETs
- im DIL4-Gehäuse
- Vishay Siliconix®
IRFD 110
Technische Daten
| Hersteller | Vishay |
| Herstellerbezeichnung | IRFD110PBF |
| Gehäuse | DIL4 |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,54 |
| Einschaltverzögerungszeit [ns] | 6,9 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 1 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 9,4 |