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IRFU 420
Vishay MOSFETs der Serie IRFU
- Leistungs-MOSFETs
- Vishay Siliconix®
- im TO251AA-Gehäuse
IRFU 420
Technische Daten
| Hersteller | Vishay |
| Herstellerbezeichnung | IRFU420PBF |
| Gehäuse | TO251AA |
| Max. Drain-Source-Spannung [V] | 500 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 3 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 2,4 |
| Einschaltverzögerungszeit [ns] | 8 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 33 |