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BT151-650R,127
WeEn Semiconductors Thyristoren der Serien BT13_, BT14_ und BT15_
- Thyristoren
- in diversen TO-Gehäusen
- Durchlassstrom: 0,8 bis 25A
BT151-650R,127
Technische Daten
| Hersteller | WeEn Semiconductors |
| Herstellerbezeichnung | BT151-650R,127 |
| Gehäuse | TO-220AB |
| Durchlassstoßstromspitze [A] | 120 |
| Max. Rückwärts-Spitzensperrspannung [V] | 650 |
| Max. Gate-Trigger-Strom [mA] | 15 |
| Max. RMS-Durchlassstrom [A] | 12 |