Manufacturers

MID 150-12 A4

Littelfuse IGBT module series MDI and MID

  • IGBT diode modules
  • in a Y3-DCB resp. Y4-M5 housing
  • insulated-gate bipolar transistors (IGBTs)

MID 150-12 A4

38367 MID 150-12 A4 MID150-12A4 MID150-12A4 Littelfuse IGBT module series MDI and MID. IGBT diode modules in a Y3-DCB resp. Y4-M5 housing insulated-gate bipolar transistors (IGBTs)

Specifications

manufacturer
Manufacturer's name MID150-12A4
Case Y3-DCB
Peak forward surge current [A] -
(Max.) peak recurrent reverse voltage [V] -
(Max.) average forward (rectified) current [A] -
Power dissipation [mW] 760
Turn-on delay time [ns] 100
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 4,5
Max. collector current, pulsed [A] 240
Turn-off delay time [ns] 500
Max. continuous collector current at TC = 25°C 180
Data Sheet

Unit price

79,89 €

Stock: 3
Further delivery:
CW 36/2024