Manufacturers

IXDN 55 N 120 D 1

Littelfuse IGBT series IXA and IXDN

  • insulated-gate bipolar transistors (IGBTs)
  • with fast-recovery epitaxial diodes (FREDs)
  • in an SOT227B housing

IXDN 55 N 120 D 1

20568 IXDN 55 N 120 D 1 IXDN55N120D1 IXDN55N120D1 Littelfuse IGBT series IXA and IXDN. insulated-gate bipolar transistors (IGBTs) with fast-recovery epitaxial diodes (FREDs) in an SOT227B housing

This product is no longer in stock

Specifications

manufacturer
Manufacturer's name IXDN55N120D1
Case SOT227B
Power dissipation [W] 450
Turn-on delay time [ns] 100
Max. collector-emitter breakdown voltage [V] 1200
Min. gate threshold voltage [V] 4,5
Max. collector current, pulsed [A] 124
Turn-off delay time [ns] 500
Max. continuous collector current at TC = 25°C 100
Data Sheet

Unit price

28,39 €

Stock: 0