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IGW 25 N 120 H3
Infineon IGBTs der Serien IGW/IGZ/IKW/IKZ
- Bipolartransistoren mit isolierter Gate-Elektrode (IGBTs)
- im TO247-Gehäuse
- TRENCHSTOP™
IGW 25 N 120 H3
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IGW25N120H3FKSA1 |
| Gehäuse | TO247 |
| Verlustleistung [W] | 326 |
| Einschaltverzögerungszeit [ns] | 27 |
| Kollektor-Emitter-Sperrspannung, max. [V] | 1200 |
| Gate-Schwellenspannung, min. [V] | 5 |
| Max. Kollektorstrom, gepulst [A] | 100 |
| Ausschaltverzögerungszeit [ns] | 277 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 50 |