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IGW 25 N 120 H3
Infineon IGBT series IGW/IGZ/IKW/IKZ
- insulated-gate bipolar transistors (IGBTs)
- in a TO247 housing
- TRENCHSTOP™
IGW 25 N 120 H3
Specifications
| manufacturer | Infineon Technologies |
| Manufacturer's name | IGW25N120H3FKSA1 |
| Case | TO247 |
| Power dissipation [W] | 326 |
| Turn-on delay time [ns] | 27 |
| Max. collector-emitter breakdown voltage [V] | 1200 |
| Min. gate threshold voltage [V] | 5 |
| Max. collector current, pulsed [A] | 100 |
| Turn-off delay time [ns] | 277 |
| Max. continuous collector current at TC = 25°C | 50 |