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IRF 540 N
Infineon MOSFETs der Serien IRF und IRL
Leistungs-MOSFETs im TO220AB-Gehäuse und mit einem geringen Drain-Source-Durchlasswiderstand. Wir bieten dieverse Ausführungen dieser Infineon Serie.
IRF 540 N
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRF540NPBF |
| Gehäuse | TO220AB |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,044 |
| Einschaltverzögerungszeit [ns] | 11 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 33 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 39 |