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IRFI 530 N
Infineon MOSFETs der Serien IRFI und IRLI
- Leistungs-MOSFETs
- im TO220-Fullpak-Gehäuse
- International Rectifier HEXFET®
IRFI 530 N
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | IRFI530NPBF |
| Gehäuse | TO220-Fullpak |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,11 |
| Einschaltverzögerungszeit [ns] | 6,4 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 12 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 37 |