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SPP 20 N 60 S 5
Infineon MOSFETs der Serie SPA und SPP
- Leistungs-MOSFETs
- im TO220- bzw. TO220-Fullpak-Gehäuse
- CoolMOS™ / SIPMOS™
SPP 20 N 60 S 5
Technische Daten
| Hersteller | Infineon Technologies |
| Herstellerbezeichnung | SPP20N60S5XKSA1 |
| Gehäuse | TO220AB |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,19 |
| Einschaltverzögerungszeit [ns] | 120 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 20 |
| Gate-Schwellenspannung, min. [V] | 3,5 |
| Ausschaltverzögerungszeit [ns] | 140 |