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STE 40 NC 60
STMicroelectronics MOSFETs der Serie STE
- STM Leistungs-MOSFETs
- im SOT227B-Gehäuse (ISOTOP™)
- MDmesh™ / PowerMesh™
- N-Kanal
STE 40 NC 60
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STE40NC60 |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,13 |
| Einschaltverzögerungszeit [ns] | 49 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 40 |
| Gate-Schwellenspannung, min. [V] | 2 |