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STE 53 NC 50
STMicroelectronics MOSFETs der Serie STE
- STM Leistungs-MOSFETs
- im SOT227B-Gehäuse (ISOTOP™)
- MDmesh™ / PowerMesh™
- N-Kanal
STE 53 NC 50
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STE53NC50 |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 500 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,08 |
| Einschaltverzögerungszeit [ns] | 46 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Max. Dauer-Kollektorstrom bei TC=25°C [A] | 53 |