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STE 88 N 65 M5
STMicroelectronics MOSFETs der Serie STE
- STM Leistungs-MOSFETs
- im SOT227B-Gehäuse (ISOTOP™)
- MDmesh™ / PowerMesh™
- N-Kanal
STE 88 N 65 M5
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STE88N65M5 |
| Gehäuse | SOT227B |
| Max. Drain-Source-Spannung [V] | 650 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,029 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 88 |
| Gate-Schwellenspannung, min. [V] | 3 |