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STP 315 N 10 F7
STMicroelectronics MOSFETs der Serie STP
STM Leistungs-MOSFETs im TO220-Gehäuse. Wir bieten diverse Ausführungen dieser STMicroelectronics Serie an.
- MDmesh™ / SuperMESH™ / FDmesh™ / STripFET™ / DeepGATE™
STP 315 N 10 F7
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STP315N10F7 |
| Gehäuse | TO220 |
| Leistung [W] | 315 |
| Max. Drain-Source-Spannung [V] | 100 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,0027 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 180 |