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STW 4 N 150
STMicroelectronics MOSFETs der Serie STW
- STM Leistungs-MOSFETs
- im TO247-Gehäuse
- PowerMESH™ / MDmesh™ / FDmesh™ / SuperMESH™ / STripFET™
STW 4 N 150
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STW4N150 |
| Gehäuse | TO247 |
| Max. Drain-Source-Spannung [V] | 1500 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 7 |
| Einschaltverzögerungszeit [ns] | 35 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 4 |
| Gate-Schwellenspannung, min. [V] | 3 |
| Ausschaltverzögerungszeit [ns] | 45 |