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STW 26 NM 60 N
STMicroelectronics MOSFETs der Serie STW
- STM Leistungs-MOSFETs
- im TO247-Gehäuse
- PowerMESH™ / MDmesh™ / FDmesh™ / SuperMESH™ / STripFET™
STW 26 NM 60 N
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STW26NM60N |
| Gehäuse | TO247 |
| Max. Drain-Source-Spannung [V] | 600 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,165 |
| Einschaltverzögerungszeit [ns] | 13 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 20 |
| Ausschaltverzögerungszeit [ns] | 85 |