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STW 32 NM 50 N
STMicroelectronics MOSFETs der Serie STW
- STM Leistungs-MOSFETs
- im TO247-Gehäuse
- PowerMESH™ / MDmesh™ / FDmesh™ / SuperMESH™ / STripFET™
STW 32 NM 50 N
Technische Daten
| Hersteller | STMicroelectronics |
| Herstellerbezeichnung | STW32NM50N |
| Gehäuse | TO247 |
| Max. Drain-Source-Spannung [V] | 500 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,13 |
| Einschaltverzögerungszeit [ns] | 21,5 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 22 |
| Gate-Schwellenspannung, min. [V] | 2 |
| Ausschaltverzögerungszeit [ns] | 110 |