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BAV 19 WS
Taiwan Semiconductor Silicium-Dioden der Serien 1N/BAS/BAV
- SMD Silicium-Allzweck-Dioden
- im SOD323F-Gehäuse
- geeignet für die direkte Montage auf Leiterplatten
BAV 19 WS
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | BAV19WS RRG |
| Gehäuse | SOD323F |
| Betriebstemperaturbereich [°C] | -65...+150 |
| Max. Rückwärts-Spitzensperrspannung [V] | 250 |
| Max. Durchlassspannung [V] | 1,25 |
| Mittelwert Durchlassstrom [A] | 0,2 |