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ZD 0,5 W 4,3 V 2%
* Gehäuse: DO35
* nur 2% Toleranz UZ
* Lötbarkeit, max 260°C/10s
* Serie BZX55B_ von Taiwan Semiconductor
Z-Dioden 0,5 W
* gegurtet* Gehäuse: DO35
* nur 2% Toleranz UZ
* Lötbarkeit, max 260°C/10s
* Serie BZX55B_ von Taiwan Semiconductor
ZD 0,5 W 4,3 V 2%
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | BZX55B4V3 A0G |
| Gehäuse | DO35 |
| Sperrstrom [µA] | 1 |
| Sperrspannung [V] | 1 |
| Zenerspannungsbereich [V] | 4,21-4,39 |
| Teststrom [mA] | 5 |
| Max. Zenerimpedanz [Ω] | 75 |
| Verlustleistung [W] | 0,5 |