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MBR 10 L 100 CT
Taiwan Semiconductor Schottky-Diode, low UF
Taiwan Semiconductor Schottky-Diode, low UF
- Low UF
- Kunststoff erfüllt UL94V-0
- Anschlüsse lötbar nach MIL-STD-202, Meth. 208
MBR 10 L 100 CT
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | MBR10L100CT |
| Gehäuse | TO220AB |
| Sperrstrom [mA] | 0,02 |
| Max. Rückwärts-Spitzensperrspannung [V] | 100 |
| Max. Durchlassspannung [V] | 0,85 |
| Mittelwert Durchlassstrom [A] | 5 |