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TSM 2309 CX
Taiwan Semiconductor SMD MOSFETs der Serie TSM
- SMD-Leistungs-MOSFETs
- im SOT23-Gehäuse
- TSC
TSM 2309 CX
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM2309CX RFG |
| Gehäuse | SOT23 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,19 |
| Einschaltverzögerungszeit [ns] | 5,2 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 3,1 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 36 |