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TSM 120 N 06 LCS
Taiwan Semiconductor SMD MOSFETs der Serie TSM
- SMD-Leistungs-MOSFETs
- im SO8-Gehäuse
- TSC
TSM 120 N 06 LCS
Technische Daten
| Hersteller | Taiwan Semiconductor |
| Herstellerbezeichnung | TSM120N06LCS RLG |
| Gehäuse | SO8 |
| Ausführung | gegurtet |
| Max. Drain-Source-Spannung [V] | 60 |
| Max. Drain-Source-Durchlasswiderstand [Ω] | 0,012 |
| Einschaltverzögerungszeit [ns] | 6,4 |
| Max. Dauer-Drainstrom bei TC = 25°C [A] | 23 |
| Gate-Schwellenspannung, min. [V] | 1,2 |
| Ausschaltverzögerungszeit [ns] | 23 |